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| BB 439 Silicon Variable Capacitance Diode Preliminary Data q q BB 439 For VHF tuned circuit applications High figure of merit Type BB 439 Marking white 2 Ordering Code (tape and reel) Q62702-B577 Pin Configuration Package1) SOD-323 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Operating temperature range Storage temperature range Thermal Resistance Junction - ambient Rth JA Symbol VR VRM IF Top Tstg Values 28 30 20 - 55 ... + 150 Unit V mA - 55 ... + 125 C 450 K/W 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 07.94 BB 439 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Reverse current VR = 28 V VR = 28 V, TA = 60 C Diode capacitance, f = 1 MHz VR = 3 V VR = 25 V Capacitance ratio, f = 1 MHz VR = 3 V, 25 V Capacitance matching VR = 3 V ... 25 V, f = 1 MHz Series resistance f= 100 MHz, CT = 12 pF Figure of merit f = 50 MHz, VR = 3 V f = 200 MHz, VR = 25 V Symbol min. IR - - CT 26 4.3 CT3 / CT25 CT Values typ. - - - - - - 0.35 max. Unit nA 20 200 pF 32 6 6.5 3 0.5 - % - 5 - - / CT rs Q - - 280 600 - - Diode capacitance CT = f (VR) f= 1 MHz Semiconductor Group 2 |
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